LUCKY-DRIFT MECHANISM FOR IMPACT IONISATION IN SEMICONDUCTORSRIDLEY BK.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 17; PP. 3373-3388; BIBL. 17 REF.Article

RECONCILIATION OF THE CONWELL-WEISSKOPF AND BROOKS-HERRING FORMULAE FOR CHARGED-IMPURITY SCATTERING IN SEMICONDUCTORS: THIRD-BODY INTERFERENCE.RIDLEY BK.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 10; PP. 1589-1593; BIBL. 13 REF.Article

THE ELECTRON-PHONON INTERACTION IN QUASI-TWO-DIMENSIONAL SEMICONDUCTOR QUANTUM-WELL STRUCTURESRIDLEY BK.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 28; PP. 5899-5917; BIBL. 11 REF.Article

THE PHOTOIONISATION CROSS SECTION OF DEEP-LEVEL IMPURITIES IN SEMICONDUCTORSRIDLEY BK.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 10; PP. 2015-2026; BIBL. 23 REF.Article

NEGATIVE RESISTANCE DOMAINS MOVING AT SONIC SPEEDS IN PIEZOELECTRIC SEMICONDUCTORS.RIDLEY BK.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 11; PP. 1555-1559; BIBL. 16 REF.Article

MULTIPHONON, NON-RADIATIVE TRANSITION RATE FOR ELECTRONS IN SEMICONDUCTORS AND INSULATORS.RIDLEY BK.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 11; PP. 2323-2341; BIBL. 10 REF.Article

ANATOMY OF THE TRANSFERRED-ELECTRON EFFECT IN III-V SEMICONDUCTORS.RIDLEY BK.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 2; PP. 754-764; BIBL. 35 REF.Article

ON THE COULOMBIC SCATTERING OF A CHARGED PARTICLE.RIDLEY BK.1977; J. PHYS. A; G.B.; DA. 1977; VOL. 10; NO 4; PP. L79-L81; BIBL. 10 REF.Article

MECHANISM OF ELECTRICAL BREAKDOWN IN SIO₂ FILMS.RIDLEY BK.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 998-1007; BIBL. 49 REF.Article

THE DIFFUSION OF HOT ELECTRONS ACROSS A SEMICONDUCTOR BASERIDLEY BK.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 24; NO 2; PP. 147-154; BIBL. 32 REF.Article

COMMENT ON EMPIRICAL PHOTOIONISATION THRESHOLDS FOR DEEP-LEVEL IMPURITIES IN SEMICONDUCTORS. REPLYNORAS JM; RIDLEY BK.1981; J. PHYS. C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 23; PP. L713-L718; 5 P.; BIBL. 6 REF.Article

SELECTION RULES FOR MULTIPHONON TRANSITIONS AL TETRAHEDRAL LATTICE SITESAMATO MA; RIDLEY BK.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 78; NO 2; PP. 170-171; BIBL. 3 REF.Article

HOT ELECTRONS IN NONPARABOLIC BANDS WITH ACOUSTIC AND POLAR OPTICAL PHONON SCATTERINGHARRIS JJ; RIDLEY BK.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 2; PP. 197-207; BIBL. 18 REF.Serial Issue

TRAPPING KINETICS IN SOLIDS CONTAINING BROADENED LEVELS.RIDLEY BK; LEACH MF.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 8; PP. 1267-1273; BIBL. 10 REF.Article

ON THE POSITION OF ENERGY LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORSLEDEBO LA; RIDLEY BK.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 27; PP. L961-L964; BIBL. 26 REF.Article

PHOTOCONDUCTIVITY, ELECTRON TRAPS AND LEVEL-BROADENING IN GAAS:O.LEACH MF; RIDLEY BK.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 11; PP. 2249-2263; BIBL. 12 REF.Article

A STUDY OF AMPLIFIED ACOUSTIC FLUX IN N-GAAS BY BRILLOUIN SCATTERING.SUSSMANN RS; RIDLEY BK.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 21; PP. 3941-3961; H.T. 3; BIBL. 34 REF.Article

A MODEL FOR THE INTERPRETATION OF MEASUREMENTS OF PHOTOIONISATION AND CAPTURE CROSS SECTIONS ASSOCIATED WITH DEEP-LEVEL IMPURITESRIDLEY BK; AMATO MA.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 9; PP. 1255-1269; BIBL. 35 REF.Article

A COMPARISON OF SIMPLE THEORETICAL MODELS FOR THE PHOTOIONISATION OF IMPURITIES IN SEMICONDUCTORSAMATO MA; RIDLEY BK.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 10; PP. 2027-2040; BIBL. 17 REF.Article

ON THE ORIGIN OF SLOW DOMAINS IN GAAS:O.LEACH MF; RIDLEY BK.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 11; PP. 2265-2280; BIBL. 37 REF.Article

PHOTOCONDUCTIVE BEHAVIOUR ASSOCIATED WITH BROADENED TRAP DISTRIBUTIONS IN SOLIDS.RIDLEY BK; LEACH MF.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 13; PP. 2425-2435; BIBL. 14 REF.Article

IMPURITY SCATTERING OF ELECTRONS IN NON-DEGENERATE SEMICONDUCTORSEL GHANEM HMA; RIDLEY BK.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 10; PP. 2041-2054; BIBL. 28 REF.Article

PHOTOCONDUCTIVITY IN N-TYPE GAAS:O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EVARIKAN MC; HATCH CB; RIDLEY BK et al.1980; J. PHYS. C: SOLID STATE PHYS.; GBR; DA. 1980; VOL. 13; NO 4; PP. 635-650; BIBL. 26 REF.Article